Related papers: Ballistic bit addressing in a magnetic memory cell…
This paper gives an overview of a new technique, named pseudo-ring testing (PRT). PRT can be applied for testing wide type of random access memories (RAM): bit- or word-oriented and single- or dual-port RAM's. An essential particularity of…
Processing-in-memory (PIM) turns out to be a promising solution to breakthrough the memory wall and the power wall. While prior PIM designs yield successful implementation of bitwise Boolean logic operations locally in memory, it is…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
We show that a tight-binding model device consisting of a laterally connected ring at half filling in a tangent time-dependent magnetic field can in principle be designed to pump a purely spin current. The process exploits the spin-orbit…
A quantum memory is a system that enables transfer, storage, and retrieval of optical quantum states by ON/OFF switching of the control signal in each stages of the memory. In particular, it is known that, for perfect transfer of a…
Miniaturized atomic magnetometers, particularly spin-exchange relaxation-free atomic magnetometers, have been emerging in clinical imaging applications such magnetocardiography and magnetoencephalography. Miniaturization, portability, and…
Recent breakthroughs in associative memories suggest that silicon memories are coming closer to human memories, especially for memristive Content Addressable Memories (CAMs) which are capable to read and write in analog values. However, the…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
High fidelity quantum control over qubits is of crucial importance for realistic quantum computing, and it turns to be more challenging when there are inevitable interactions among qubits. By employing a bandselective shaped pulse, we…
Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, whilst enabling arbitrary parallel operations. We demonstrate addressing of…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
We show that a laser pulse designed as an adiabatic ramp followed by a kick allows one to reach a perfect postpulse molecular alignment, free of saturation. The mechanism is based on an optimized distribution of the energy between a weakly…
Quantum memories are vital to the scalability of photonic quantum information processing (PQIP), since the storage of photons enables repeat-until-success strategies. On the other hand the key element of all PQIP architectures is the beam…
This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
We design realizable time-dependent semiclassical pulses to invert the population of a two-level system faster than adiabatically when the rotating-wave approximation cannot be applied. Different approaches, based on the counterdiabatic…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Starting with the basic control system model often employed in NMR pulse design, we derive more realistic control system models taking into account effects such as off-resonant excitation for systems with fixed inter-qubit coupling…
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…