Related papers: Ballistic bit addressing in a magnetic memory cell…
We report theoretical investigation of the switching probability of electric field-induced precessional magnetization switching by solving the Fokker-Planck equation numerically with finite difference method. The switching probability is…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…
Here we consider the magnetization dynamics in ferromagnetic nanoparticles or films driven by external magnetic field pulses directed transverse to the initial equilibrium state. The excitation pulse drives large-angle ultra-fast…
This paper presents an algebraic theory of instruction sequences with instructions for a random access machine (RAM) as basic instructions, the behaviours produced by the instruction sequences concerned under execution, and the interaction…
The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained.…
We study magnetization reversal using various r.f. magnetic pulses. We show numerically that switching is possible with simple sinusoidal pulses; however the optimum approach is to use a frequency-swept (chirped) r.f. magnetic pulse, the…
The inversion of extremely high order matrices has been a challenging task because of the limited processing and memory capacity of conventional computers. In a scenario in which the data does not fit in memory, it is worth to consider…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
The effect of noise on the process of high-speed remagnetization of vortex state of a pentagonal array of five circular magnetic nanoparticles is studied by means of computer simulation of Landau-Lifshits model. The mean switching time and…
As DRAM and other transistor-based memory technologies approach their scalability limits, alternative storage solutions like Phase-Change Memory (PCM) are gaining attention for their scalability, fast access times, and zero leakage power.…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
Standard memory modules to store (and access) data are designed for use with a single system accessing it. More complicated memory modules would be accessed through a memory controller, which are also designed for one system. For multiple…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Here, we describe the prototype for precisely scaled temperature assisted magnetic recording scheme utilizing the characteristics of thermo-remnant magnetization (TRM) in bulk SmCrO$_3$ as a memory media. The TRM response can be exploited…
Resistive random-access memory (RRAM) provides an excellent platform for analog matrix computing (AMC), enabling both matrix-vector multiplication (MVM) and the solution of matrix equations through open-loop and closed-loop circuit…
Due to underlying symmetries the ground states of magnetic adatoms may be highly stable, which opens perspectives for application as single-atom memory. A specific example is a single holmium atom (with $J=8$) on a platinum (111) surface…
We theoretically propose a strategy to address an individual spin in a large array of spin qubits with a random distribution of g-factors by employing a combination of single-qubit and SWAP gates facilitated by a global microwave field and…
The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization…
Many hard combinatorial problems can be mapped onto Ising models, which replicate the behavior of classical spins. Recent advances in probabilistic computers are characterized by parallelization and the introduction of novel hardware…