Related papers: Ballistic bit addressing in a magnetic memory cell…
For the implementation of a quantum computer it is necessary to exercise complete control over the Hamiltonian of the used physical system. For NMR quantum computing the effectively acting Hamiltonian can be manipulated via pulse sequences.…
Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…
Quantum supremacy in many applications using well-known quantum algorithms rely on availability of data in quantum format. Quantum Random Access Memory (QRAM), an equivalent of classical Random Access Memory (RAM), fulfills this…
Transcranial magnetic stimulation (TMS) with asymmetric electric field pulses, such as monophasic, offers directional selectivity for neural activation but requires excessive energy. Previous pulse shape optimisation has been limited to…
One of the fundamental open questions in computational complexity is whether the class of problems solvable by use of stochasticity under the Random Polynomial time (RP) model is larger than the class of those solvable in deterministic…
Microwave three-wave mixing allows for enantiomer-selective excitation of randomly oriented chiral molecules into rotational states with different energy. The random orientation of molecules is reflected in the degeneracy of the rotational…
It is shown that a pulsed current driven through Ni nanowires provokes an irreversible magnetization reversal at a field distant from the spontaneous switching field $H_{sw}$ by $\Delta H$ of as much as 40 % of $H_{sw}$. The state of the…
In a ferromagnetic nanodisk, the magnetization tends to swirl around in the plane of the disk and can point either up or down at the center of this magnetic vortex. This binary state can be useful for information storage. It is demonstrated…
Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…
We describe a new class of systems exhibiting return point memory (RPM) that are different from those discussed before in the context of ferromagnets. We show numerically that one dimensional random Ising antiferromagnets have RPM, when…
Since its inception the memristive fuse has been a good example of how small numbers of memristors can be combined to obtain useful behaviours unachievable by individual devices. In this work, we link the memristive fuse concept with that…
Magnetoresistive random access memory (MRAM) technologies with thermally unstable nanomagnets are leveraged to develop an intrinsic stochastic neuron as a building block for restricted Boltzmann machines (RBMs) to form deep belief networks…
Using programmable analog quantum annealing processors, we implement a sampling-based magnetic hysteresis protocol to probe the counterintuitive notion of magnetic memory of antiferromagnets. A key component of this protocol responsible for…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Non-invasive mobile electroencephalography (EEG) acquisition systems have been utilized for long-term monitoring of seizures, yet they suffer from limited battery life. Resistive random access memory (RRAM) is widely used in…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Nowadays a bit is no longer a mere abstraction but a physical quantity whose manipulation governs both operation of modern technologies and theoretical frontiers of fundamental science. In this work we propose a setup in which the memory…
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the…