Related papers: Ballistic bit addressing in a magnetic memory cell…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free…
As in conventional computing, key attributes of quantum memories are high storage density and, crucially, random access, or the ability to read from or write to an arbitrarily chosen register. However, achieving such random access with…
Optimal labeling schemes lead to efficient experimental protocols for quantum information processing by nuclear magnetic resonance (NMR). A systematic approach of finding optimal labeling schemes for a given computation is described here.…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
It is shown theoretically that a single a few picoseconds long acoustic pulse can reverse magnetization in a magneto-strictive material Terfenol-D. Following giant magneto-elastic changes of free energy density the magnetization vector is…
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…
We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…
Any quantum information system operates with entanglement as a resource, which should be deterministically generated by a joint measurement known as complete Bell state measurement (BSM). The determinism arises from a quantum nondemolition…
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…
Processing-in-Memory (PIM) architectures enable computation directly within DRAM and help combat the memory wall problem. Bit-shifting is a fundamental operation that enables PIM applications such as shift-and-add multiplication, adders…
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
Entrainment experiments on the vertebrate segmentation clock have revealed that embryonic oscillators actively change their internal frequency to adapt to the driving signal. This is neither consistent with a one-dimensional clock model nor…
The magnetization reversal in a single molecular magnet (SMM) weakly coupled to an electrode with spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated by means of the rate equation. A microscopic…
The orientation of the order parameter of quantum magnets can be used to store information in a dense and efficient way. Switching this order parameter corresponds to writing data. To understand how this can be done, we study a precessional…
We study analytically the precessional switching of the magnetization of a thin macrospin. We analyze its response when subjected to an external field along its in-plane hard axis. We derive the exact trajectories of the magnetization. The…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…