Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behaviour is based entirely on the electron spin degree of freedom which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behaviour. Our scheme is fundamentally different from previously discussed schemes of memristive devices and broadens the possible range of applications of semiconductor spintronics.
@article{arxiv.0806.2151,
title = {Spin memristive systems},
author = {Yu. V. Pershin and M. Di Ventra},
journal= {arXiv preprint arXiv:0806.2151},
year = {2009}
}