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Reversible logic can provide lower switching energy costs relative to all irreversible logic, including those developed by industry in semiconductor circuits, however, more research is needed to understand what is possible. Superconducting…
Spin wave computing device where an algorithm can be encoded by recording a corresponding magnetization pattern onto a hard magnetic material was previously proposed1 and a particular implementation of a vector-matrix algorithm was…
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to…
A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum…
Magnetic Random Access Memories (MRAM) interest is growing fast in the microelectronics industry. Commercial MRAM products already exist and all major industrial players have launched large R\&D efforts to bring Spin Transfer Torque MRAM to…
Ever since the discovery of all-optical magnetization switching (AOS) around a decade ago, this phenomenon of manipulating magnetization using only femtosecond laser pulses has promised a large potential for future data storage and logic…
We study the problem of operating a quantum switch with memory constraints. In particular, the switch has to allocate quantum memories to clients to generate link-level entanglements (LLEs), and then use these to serve end-to-end…
We propose three different mechanisms for pumping spin-polarized currents in a ballistic circuit using a time-dependent magnetic field acting on an asymmetrically connected quantum ring at half filling. The first mechanism works thanks to a…
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…
Magnetization of a spin1/2 set is determined by means of their individual wave function. The theoretical treatment based on the fundamental axioms of quantum mechanics and solving explicitly Schr\"odinger equation gives the evolution of…
A microwave memory using a superconducting artificial chiral atom embedded in a one-dimensional open transmission line is theoretically investigated. By applying a coupling field to a single artificial atom, we modify its dispersion,…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
Compared to quantum logic gates, quantum memory has received far less attention. Here, we explore the prognosis for a solid-state, scalable quantum dynamic random access memory (Q-DRAM), where the qubits are encoded by the spin orientations…
We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…
The realization of an elementary quantum network that is intrinsically secure and operates over long distances requires the interconnection of several quantum modules performing different tasks. In this work we report the interconnection of…
Nuclear spins in quantum dots are promising candidates for fast and scalable quantum memory. By utilizing the hyperfine interaction between the central electron and its surrounding nuclei, quantum information can be transferred to the…
Manipulation of magnetization with ultrashort laser pulses is promising for information storage device applications. The dynamic of the magnetization response depends on the energy transfer from the photons to the spins during the initial…