Related papers: Ballistic bit addressing in a magnetic memory cell…

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…

Resistive switching is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start…

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

Aiming to augment generative models with external memory, we interpret the output of a memory module with stochastic addressing as a conditional mixture distribution, where a read operation corresponds to sampling a discrete memory address…

The reversal of the magnetization under the influence of a field pulse has been previously predicted to be an incoherent process with several competing phenomena such as domain wall relaxation, spin wave-mediated instability regions, and…

A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The…

Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…

The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary…

Radio-frequency pulses are widespread for the control of quantum bits and the execution of operations in quantum computers. The ability to tune key pulse parameters such as time-dependent amplitude, phase, and frequency is essential to…

Known simulations of random access machines (RAMs) or parallel RAMs (PRAMs) by Boolean circuits incur significant polynomial blowup, due to the need to repeatedly simulate accesses to a large main memory. Consider a single modification to…

The control of nonthermal, all-optical magnetization switching under the regime with an independent state of laser polarization opens up new opportunities for ultrafast magnetic recording. Here, we investigate the photo-magnetic…

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and…

It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…

The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…

Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…

We show that field-free molecular orientation induced by a half-cycle pulse may be considerably enhanced by an additional laser pulse inducing molecular anti-alignment. Two qualitatively different enhancement mechanisms are identified…

The deterministic switching of magnetic order parameters is critically important, as it forms the fundamental basis for manipulating information states in magnetic memory devices. This work presents a general theoretical framework that…