Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.
@article{arxiv.1509.00070,
title = {In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory},
author = {B. L. Ji and H. Li and Q. Ye and S. Gausepohl and S. Deora and D. Veksler and S. Vivekanand and H. Chong and H. Stamper and T. Burroughs and C. Johnson and M. Smalley and S. Bennett and V. Kaushik and J. Piccirillo and M. Rodgers and M. Passaro and M. Liehr},
journal= {arXiv preprint arXiv:1509.00070},
year = {2015}
}
Comments
4 pages. Memory Workshop (IMW), 2015 IEEE International