Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing for electrical control of the collective phases. Here, we report the observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI3, a natural layer antiferromagnet. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field, and electric-field switching of magnetization even in multilayer samples.
@article{arxiv.1910.11383,
title = {Magneto-memristive switching in a two-dimensional layer antiferromagnet},
author = {Hyun Ho Kim and Shengwei Jiang and Bowen Yang and Shazhou Zhong and Shangjie Tian and Chenghe Li and Hechang Lei and Jie Shan and Kin Fai Mak and Adam W. Tsen},
journal= {arXiv preprint arXiv:1910.11383},
year = {2019}
}