Related papers: X-ray diffraction peak profiles from threading dis…
X-ray diffraction studies of the bond-orientational order in the hexatic-B phase of 75OBC and 3(10)OBC compounds are presented. The temperature evolution of an angular profile of a single diffraction peak is analyzed. Close to the…
GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
Distributed Bragg reflectors (DBRs) can be fabricated by electrochemically etching nitride epitaxial structures consisting of alternating layers of highly n-type doped and non-intentionally doped (NID) GaN. Threading dislocations (TDs) can…
Unique intensity features arising from dynamical diffraction arise in coherent x-ray nanobeam diffraction patterns of crystals having thicknesses larger than the x-ray extinction depth or exhibiting combinations of nanoscale and mesoscale…
The magnetic anisotropy of a planar array of Ga$_{x}$Fe$_{4-x}$N nanocrystals (NCs) embedded in a GaN host is studied by ferromagnetic resonance. X-ray diffraction and transmission electron microscopy are employed to determine the phase and…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
Dislocation in (011)-oriented $\beta$-Ga$_2$O$_3$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Transmission XRT reveals dislocations lying on the (001)…
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 $\mu$m thick GaSbBi epilayers exhibit fully relaxed…
The illumination pattern (or emissivity profile) of the accretion disc due to the reflection of X-rays in AGN can be understood in terms of relativistic effects on the rays propagating from a source in a corona surrounding the central black…
Efficient thermal management is essential for the reliability of modern power electronics, where increasing device density leads to severe heat dissipation challenges. However, in thin-film systems, thermal transport is often compromised by…
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in…
The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by Micro-Raman area mapping. Pop-in…
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated that by suitably controlling the thickness and the growth…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN…
In this letter, we introduce a geometric model to explain the origin of the observed shallow levels in semiconductors threaded by a dislocation density. We show that a uniform distribution of screw dislocations acts as an effective uniform…
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with…
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…
Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By…