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Merger simulations predict that tidally induced gas inflows can trigger kpc-scale dual active galactic nuclei (dAGN) in heavily obscured environments. Previously with the Very Large Array, we have confirmed four dAGN with redshifts between…
We study the extremes of branching random walks under the assumption that the underlying Galton-Watson tree has infinite progeny mean. It is assumed that the displacements are either regularly varying or they have lighter tails. In the…
Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been characterized using Fourier transformed infrared spectroscopy at oblique incidence, attenuated total reflectance, laser…
High energy (67 keV) x-ray diffuse scattering measurements were performed on single crystals of Pb(Zn$_{1/3}$Nb$_{2/3}$)O$_3$-$x$PbTiO$_3$ (PZN-$x$PT). A novel technique was developed to map out the diffuse scattering distribution in all…
Diffraction of high-energy X-rays produced at synchrotron sources can provide rapid strain measurements, with high spatial resolution, and good penetrating power. With an uncollimated diffracted beam, through thickness averages of strain…
The static stress needed to depin a 2D edge dislocation, the lower dynamic stress needed to keep it moving, its velocity and displacement vector profile are calculated from first principles. We use a simplified discrete model whose far…
X-ray spectroscopy offers an opportunity to study the complex mixture of emitting and absorbing components in the circumnuclear regions of active galactic nuclei, and to learn about the accretion process that fuels AGN and the feedback of…
Dynamically compressed materials in longitudinal waves are described by two physical models: hydrostatic pressure, with equal, normal, principal stresses or material uniaxially strained in the wave propagation direction. These models are…
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with…
We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on…
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered…
Dislocations are a central concept in materials science, which dictate the plastic deformation and damage evolution in materials. Layered materials such as graphite admit two general types of interlayer dislocations: basal and prismatic…
A method of using X-ray absorption spectroscopy (XAS) together with resolved grazing incidence geometry for depth profiling atomic, electronic, chemical or magnetic local structures in thin films is presented. The quantitative deconvolution…
We present a model of the vertical stratification and the spectra of an irradiated medium under the assumption of constant pressure. Such a solution has properties intermediate between constant density models and hydrostatic equilibrium…
We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the…
Single-layer graphene sheets are typically characterized by long-wavelength corrugations (ripples) which can be shown to be at the origin of rather strong potentials with both scalar and vector components. We present an extensive…
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth…
We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum…
Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films have been grown by pulsed-laser deposition from a Bi4-xNdxTi3O12 (x=0.85) target on SrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3 substrates,…
Within the continuum dislocation theory the asymptotic analysis of the plane strain crack problem for a single crystal having only one active slip system on each half-plane is provided. The results of this asymptotic analysis show that the…