Related papers: X-ray diffraction peak profiles from threading dis…
Strain and rotation fields of dislocations in monolayer graphene have been mapped in a recent experiment. These fields are finite everywhere and differ from those given by linear elasticity which does not consider rotation explicitly and…
We study the X-ray illumination of an accretion disk. We relax the simplifying assumption of constant gas density used in most previous studies; instead we determine the density from hydrostatic balance. It is found that the thermal…
A new method for investigation of x-ray propagation in a rough narrow dielectric waveguide is proposed on the basis of the numerical integration of the quazioptical equation. In calculations a model rough surface was used with the given…
High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…
We studied the resonant diffraction signal from stepped surfaces of SrTiO3 at the Ti 2p -> 3d (L2,3) resonance in comparison with x-ray absorption (XAS) and specular reflectivity data. The steps on the surface form an artificial…
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and…
The hard X-ray emission of active galactic nuclei (AGN), and in particular, the reflection component, is shaped by the innermost and outer regions of the galactic nucleus. Our main goal is to investigate the variation of the Compton hump…
The recent detection of X-ray reverberation lags, especially in the Fe K\alpha\ line region, around Active Galactic Nuclei (AGN) has opened up the possibility of studying the time-resolved response (reflection) of hard X-rays from the…
We have calculated the relativistic reflection component of the X-ray spectra of accretion disks in active galactic nuclei (AGN). Our calculations have shown that the spectra can be significantly modified by the motion of the accretion flow…
The transport of an infinitely thin, hard rod in a random, dense array of point obstacles is investigated by molecular dynamics simulations. Our model mimics the sterically hindered dynamics in dense needle liquids. The center-of-mass…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
The epitaxial growth of complex oxide thin films provide three avenues to generate unique properties: the ability to influence the 3-dimensional structure of the film, the presence of a surface, and the generation of an interface. In all…
The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of edge threading dislocations in GaN{0001} gives rise to a…
Gray tin, also known as {\alpha}-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved…
Employing density-functional theory (DFT) calculations, the generalized-stacking-fault energy (GSFE) curves along two crystallographic slips, glide and shuffle, for both pristine graphene and impurity of boron (B) or nitrogen (N) doped…
We present a detailed study of the gaussian laser propagation through a dielectric system composed by two right angle prisms. We investigate the transition between the spatial coherence limit, which exhibits wave-like properties and for…
Using stochastic conformal mapping techniques we study the patterns emerging from Laplacian growth with a power-law decaying threshold for growth $R_N^{-\gamma}$ (where $R_N$ is the radius of the $N-$ particle cluster). For $\gamma > 1$ the…
2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The…
The flux flow properties of epitaxial niobium films with different pinning strengths are investigated by dc electrical resistance measurements and mapped to results derived within the framework of a theoretical model. Investigated are the…
Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very…