Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices.
@article{arxiv.0909.4711,
title = {Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires},
author = {A. A. Minkevich and E. Fohtung and T. Slobodskyy and M. Riotte and D. Grigoriev and M. Schmidbauer and A. C. Irvine and V. Novak and V. Holy and T. Baumbach},
journal= {arXiv preprint arXiv:0909.4711},
year = {2011}
}