Related papers: X-ray diffraction peak profiles from threading dis…

This study presents a nondestructive, high-resolution method for three-dimensional imaging of threading dislocations in beta-$Ga_{2}O_{3}$ (010) using phase-contrast microscopy (PCM). A one-to-one correspondence between dislocation…

The ripplocation is a crystallographic defect which is unique to layered materials, combining nanoscale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations, in…

Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth…

We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111)…

We have studied a model of a random walk in a quenched random environment. In addition to featuring anomalous diffusion and localization, for special regimes of disorder parameters the particle density decomposes into multi-Gaussian…

We present ultrafast x-ray diffraction experiments on thin films of metallic SrRuO$_3$ (SRO) after their excitation with ultrashort intense laser pulses. Depending on the layer thickness, the data exhibit a transient splitting of the (002)…

We present classes of models in which particles are dropped on an arbitrary fixed finite connected graph, obeying adhesion rules with screening. We prove that there is an invariant distribution for the resulting height profile, and Gaussian…

Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act as strong non-radiative recombination centers, while others…

Based on the cross correlation analysis of the Kikuchi diffraction patterns high-resolution EBSD is a well established method to determine the internal stress in deformed crystalline materials. In many cases, however, the stress values…

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…

Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet…

The present paper studies non-uniform plastic deformations of crystals undergoing anti-plane constrained shear. The asymptotically exact energy density of crystals containing a moderately large density of excess dislocations is found by the…

Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensity at large wave vectors does not follow Porod's law…

The domain structures and dislocations in epitaxial thin films of La0.7Ca0.3MnO3 grown on SrTiO3 substrates by pulsed laser deposition were investigated using Bragg-contrast diffraction and high-resolution transmission electron microscopy.…

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and…

X-ray observations of active galactic nuclei (AGN) show variability on timescales ranging from a few hours up to a few days. Some of this variability may be associated with occultation events by clouds in the broad line region. In this…

We study the properties of the Fraunhofer diffraction patterns produced by Gaussian beams crossing spiral phase plates. We show, both analytically and numerically, that off-axis displacements of the input beam produce asymmetric diffraction…

We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and…

Understanding the interplay of structural and electronic symmetry breaking in Fe-based high temperature superconductors remains of high interest. In this work we grow strain-patterned multilayer FeSe thin films in a range of thicknesses…

We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt…