Dislocations in (011)-oriented vertical Bridgman $\beta$-Ga$_2$O$_3$ substrates

Yongzhao Yao; Daiki Katsube; Hirotaka Yamaguchi; Yukari Ishikawa

Dislocations in (011)-oriented vertical Bridgman $\beta$-Ga$_2$O$_3$ substrates

Materials Science 2026-05-11 v1

Authors: Yongzhao Yao , Daiki Katsube , Hirotaka Yamaguchi , Yukari Ishikawa

Abstract

Dislocation in (011)-oriented $\beta$ -Ga $_2$ O $_3$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Transmission XRT reveals dislocations lying on the (001) plane and extending along [010], forming arrays associated with domain boundaries. Dislocations on the (011) plane were also identified but differ from those responsible for line-shaped pits on (001) epilayers. Reflection XRT shows good agreement with transmission XRT and enables classification of dislocation types based on contrast features. Reticulography confirms domain boundaries with misorientation on the order of 1E-5 rad, providing insight into defect formation relevant to epi-growth and device performance.

Cite

@article{arxiv.2605.07445,
  title  = {Dislocations in (011)-oriented vertical Bridgman $\beta$-Ga$_2$O$_3$ substrates},
  author = {Yongzhao Yao and Daiki Katsube and Hirotaka Yamaguchi and Yukari Ishikawa},
  journal= {arXiv preprint arXiv:2605.07445},
  year   = {2026}
}

Comments

18 pages, 4 figures

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