Related papers: Performance of a bipolar single electron device
We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a…
In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining…
The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly…
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
We analyze cotunneling transport through two quantum dots in series weakly coupled to external ferromagnetic leads. In the Coulomb blockade regime the electric current flows due to third-order tunneling, while the second-order…
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron…
The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…
Tunneling of electrons into a two-dimensional electron system is known to exhibit an anomaly at low bias, in which the tunneling conductance vanishes due to a many-body interaction effect. Recent experiments have measured this anomaly…
We study the system of two superconductors connected by a small normal grain. We consider the modification of the Josephson effect by the Coulomb interaction on the grain. Coherent charge transport through the junction is suppressed by…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
We theoretically investigate quantum fluctuation of charge between even and odd states of a normal-superconducting-normal single-electron tunneling transistor. It is shown that due to the superconducting gap, the charge fluctuation in the…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
In order to illustrate the emergence of Coulomb blockade from coherent quantum phase-slip processes in thin superconducting wires, we propose and theoretically investigate two elementary setups, or "devices". The setups are derived from…
A recent Letter [1] has proposed a device, consisting of an rf SQUID with the junction replaced by a double one, i.e. a Bloch transistor. For symmetric Josephson couplings, and for specific flux bias and gate voltage applied to the…
A recently introduced Early modeling of transistors is applied to the study of the common collector amplifier (or emitter follower), an important type of electronic circuit typically employed as buffer, being characterized by near unit…
We analyze how decoherence appears in the I-V characteristics of a voltage-biased single-Cooper-pair transistor. Especially the effect on resonant single or several Cooper-pair tunneling is studied. We consider both a symmetric and an…