Related papers: Performance of a bipolar single electron device
Theoretical description of the field emission of electrons from nanoscale objects weakly coupled to the cathode is presented. It is shown that the field- emission current increases in a step-like fashion due to single-electron charging…
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…
We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunnelling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power…
Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance…
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…
By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided.…
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that…
We review the latest progress in understanding the fundamental noise properties of a coherent single electron emitter known as the mesoscopic capacitor. The system consists of a sub-micron cavity connected to a two-dimensional electron gas…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
A new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask.…
Single-electron transistors embedded in a vibrating nanoresonator such as a doubly-clamped carbon nanotube exhibit effects stemming from the coupling between electronic and vibrational degrees of freedom. In particular, a capacitive…
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of…
A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths.…
We present a first-principles method for calculating the charging energy of a molecular single-electron transistor operating in the Coulomb blockade regime. The properties of the molecule are modeled using density-functional theory, the…
We theoretically study the tunnelling current of a single electron transistor (SET) under optical pumping. It found that holes in the quantum dot(QD) created by optical pumping lead to new channels for the electrons tunnelling from emitter…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
Semiconductor transistors are essential elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be highly…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…