We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed.
@article{arxiv.0904.3193,
title = {Cryogenic instrumentation for fast current measurement in a silicon single electron transistor},
author = {T. Ferrus and D. G. Hasko and Q. R. Morrissey and S. R. Burge and E. J. Freeman and M. J. French and A. Lam and L. Creswell and R. J. Collier and D. A. Williams and G. A. D. Briggs},
journal= {arXiv preprint arXiv:0904.3193},
year = {2010}
}