English

On the current gap of single-electron transistors

Mesoscale and Nanoscale Physics 2007-05-23 v1

Abstract

Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold clusters, the electron spectrum, the temperature dependence of the chemical potential and the residual charge are calculated. We show that the residual charge is equal to the non-integer value of elementary charge ee and depends on the cluster's shape. The equations for the analysis of the current-voltage characteristic are used under conservation condition for the total energy of the structure taking into account the contact potential difference. Restrictions associated with the Coulomb instability of a cluster are introduced into the theory in a the simple way. It is shown that the critical charge of the cluster in the open electron system is close to the residual charge. For single-electron transistors based on small gold clusters the current gap and its voltage asymmetry are computed. We demonstrate that the current gap exhibits non-monotonic size dependences, which are related to the quantization of the electron spectrum and the Coulomb blockade.

Keywords

Cite

@article{arxiv.cond-mat/0512633,
  title  = {On the current gap of single-electron transistors},
  author = {Valentin V. Pogosov and Eugene V. Vasyutin},
  journal= {arXiv preprint arXiv:cond-mat/0512633},
  year   = {2007}
}

Comments

10 pages, 7 figures

R2 v1 2026-07-22T11:26:57.607Z