Related papers: Performance of a bipolar single electron device
Charging up the surface of an insulator after beam impact can lead either to reverse sign of field between the surface and collector of electrons for case of thick sample or appearance of very high internal field for thin films. Both…
Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the…
The problem of electron transport by means of a dumbbell shaped shuttle in strong Coulomb blockade regime is solved. The electrons may be shuttled only in the cotunneling regime during the time spans when both shoulders of the shuttle…
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…
We report on the investigation of Al single electron structures equipped with miniature (8 um long) on-chip Cr resistors of R > R_k = h/e^2 = 25.8 kOhm. From the measurement of the Coulomb blockade in single-junction structures we evaluated…
We study admittance and energy dissipation in an out-of-equlibrium single electron box. The system consists of a small metallic island coupled to a massive reservoir via single tunneling junction. The potential of electrons in the island is…
We develop a linear theory of electron transport for a system of two identical quantum wires in a wide range of the wire length L, unifying both the ballistic and diffusive transport regimes. The microscopic model, involving the interaction…
We report electronic transport measurements of single-molecule transistor devices incorporating bipyridyl-dinitro oligophenylene-ethynylene dithiol (BPDN-DT), a molecule known to exhibit conductance switching in other measurement…
We theoretically study the quasiparticle current behaviour of a thermally-biased bipolar thermoelectrical superconducting quantum interference proximity transistor, formed by a normal metal wire embedded in a superconducting ring and…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…
Current-driven vibrational non-equilibrium induces vibrational sidebands in single-molecule transistors which arise from tunneling processes accompanied by absorption of vibrational quanta. Unlike conventional sidebands, these absorption…
The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
We consider a lateral double-dot system in the Coulomb blockade regime with a single spin-1/2 on each dot, mutually coupled by an anti-ferromagnetic exchange interaction. Each of the two dots is contacted by two leads. We demonstrate that…
An effective field theoretic description of $\nu=1$ bilayer electron systems stabilized by Coulomb repulsion in a single wide quantum well is examined using renormalization group techniques. The system is found to undergo a crossover from a…
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…
Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been…
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…
A superconductor-normal metal-superconductor mesoscopic Josephson junction has been realized in which the critical current is tuned through normal current injection using a symmetric electron cooler directly connected to the weak link. Both…
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the…