Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors
Other Condensed Matter
2007-05-23 v1
Abstract
In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.
Keywords
Cite
@article{arxiv.cond-mat/0504746,
title = {Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors},
author = {K. M. Indlekofer and J. Knoch and J. Appenzeller},
journal= {arXiv preprint arXiv:cond-mat/0504746},
year = {2007}
}