Related papers: Gate Stack Engineering for High-Mobility and Low-N…
Quantum system characterization techniques represent the front line in the identification and mitigation of noise in quantum computing, but can be expensive in terms of quantum resources and time to repeatedly employ. Another challenging…
While the accuracy of qubit operations has been greatly improved in the last decade, further development is demanded to achieve the ultimate goal: a fault-tolerant quantum computer that can solve real-world problems more efficiently than…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation…
Quantum transport in the presence of time-dependent drives is dominated by quantum interference and many-body effects at low temperatures. For a periodic driving, the analysis of the full counting statistics revealed the elementary events…
Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of…
We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit…
Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Gate set tomography (GST) allows for a self-consistent characterization of noisy quantum information processors. The standard device-agnostic approach treats the QIPs as black boxes that are only constrained by the laws of physics,…
We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…
The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a…
Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…
This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18{\mu}m CMOS technology at liquid helium temperature (LHT). First, the…
Transport phenomena are ubiquitous throughout the science, engineering and technology disciplines as it concerns energy, mass, charge and information exchange between systems. In particular, energy transport in the nanoscale regime has…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene…