Related papers: Gate Stack Engineering for High-Mobility and Low-N…
We theoretically study the influence of charge noise on a controlled phase gate, implemented using two proximal double quantum dots coupled electrostatically. Using the configuration interaction method, we present a full description of the…
Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift…
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg $\approx$ 0.15$\mu$m). We have studied the effect of short gate length on the small signal parameters, linearity…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
We study the effect of noise on the transport of a quantum state from a closed loop of $n-$sites with one of the sites as a sink. Using a discrete-time quantum walk dynamics, we demonstrate that the transport efficiency can be enhanced with…
The deposition of a high-$\kappa$ oxide overlayer is known to significantly enhance the room-temperature electron mobility in single-layer MoS$_{2}$ (SLM) but not in single-layer graphene (SLG). We give a quantitative account of how this…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous…
In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold and short channel performance is observed and presented. The…
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high…
We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7…
The low temperature electrical conductance through correlated quantum dots provides a sensitive probe of the physics (e.g., of Fermi-liquid vs non-Fermi-liquid behavior) of such systems. Here, we investigate the role of level asymmetry…
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…
We investigate the use of driven qubits coupled to a harmonic oscillator to implement a $\sqrt{i\mathrm{SWAP}}$-gate. By dressing the qubits through an external driving field, the qubits and the harmonic oscillator can be selectively…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth…
Quantum dot-based quantum computation employs extensively the exchange interaction between nearby electronic spins in order to manipulate and couple different qubits. The exchange interaction, however, couples the qubit states to charge…