Related papers: Gate Stack Engineering for High-Mobility and Low-N…
We provide a unified geometrical description for analyzing the stability of holonomic quantum gates in the presence of imprecise driving controls (parametric noise). We consider the situation in which these fluctuations do not affect the…
The nonlinear conductance of semiconductor heterostructures and single molecule devices exhibiting Kondo physics has recently attracted attention. We address the observed sample dependence of the measured steady state transport coefficients…
We use first-principle Quantum Monte-Carlo (QMC) simulations and numerical exact diagonalization to analyze the low-frequency charge carrier mobility within a simple tight-binding model of molecular organic semiconductors on a…
In Bi$_2$Te$_2$Se, the period of quantum oscillations arising from surface Dirac fermions can be increased 6-fold using ionic liquid gating. At large gate voltages, the Fermi energy reaches the $N$ = 1 Landau level in a 14-Tesla field. This…
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
Studying charge transport in models with nonlocal carrier--phonon interaction is difficult because it requires finite-temperature real-time correlation functions of mixed carrier--phonon operators. Focusing on models with discrete undamped…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CNOT) gates based on silicon double quantum dots (DQDs) are…
In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide…
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…
The electronic band structure of correlated Ca3Ru2O7 featuring an antiferromagnetic as well as a structural transition has been determined theoretically at high temperatures, which has led to the understanding of the remarkable properties…
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS${_2}$) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature…
Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in…
By designing a multi-channel millimeter Hall measurement configuration, we realize the carrier-density (locally) controllable measurement on the transport property in 2H MoS$_{2}$. We observe a linearly increased Hall conductivity and…
Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional…
Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of…
Geometric quantum gates are often expected to be more resilient than dynamical gates against certain types of error, which would make them ideal for robust quantum computing. However, this is still up for debate due to seemingly conflicting…
We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude…
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the…