Related papers: Gate Stack Engineering for High-Mobility and Low-N…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
Continued improvement of heat control in mesoscopic conductors brings novel tools for probing strongly correlated electron phenomena. Motivated by these advances, we comprehensively study transport due to a temperature bias in a quantum…
In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing…
Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when…
We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures…
Low-energy transport in quantum Hall states is carried through edge modes, and is dictated by bulk topological invariants and possibly microscopic Boltzmann kinetics at the edge. Here we show how the presence or breaking of symmetries of…
Scalable quantum information processing in spin-based architectures necessitates the a bility to reliably shuttle quantum states across extended device regions with minimal decoherence. In this work, we present a physics-informed algorithm…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
We introduce crosstalk-robust gate sets, which are obtained using a novel, scalable optimal control problem exploiting locality. Through the suppression of pairwise quantum crosstalk, the gate sets enable robustness that extends to…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we…
The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW…