Related papers: Gate Stack Engineering for High-Mobility and Low-N…
We determine the characteristic of dissipative quantum transport in a coupled qubit network in the presence of on-site and off-diagonal external driving. The work is motivated by the dephasing-assisted quantum transport where noise is…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…
Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear…
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…
We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid…
For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
We investigate fluctuations of electric and heat currents, along with their cross-correlations, in a two-channel charge Kondo circuit driven by either a voltage bias or a temperature gradient applied across the weak link. The ratios of…
A semiconductor-based charge qubit, confined in double quantum dots, can be a platform to implement quantum computing. However, it suffers severely from charge noises. Here, we provide a theoretical framework to implement universal…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We consider the transport and the noise characteristics for the case of a T-shape double quantum dot system using the equation of motion method. Our theoretical results, obtained in an approximation equivalent to the Hartree-Fock…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC…
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The…