Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm2/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect.
@article{arxiv.1603.08471,
title = {Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface},
author = {Shengwei Zeng and Weiming Lü and Zhen Huang and Zhiqi Liu and Kun Han and Kalon Gopinadhan and Changjian Li and Rui Guo and Wenxiong Zhou and Haijiao Harsan Ma and Linke Jian and T Venkatesan and Ariando},
journal= {arXiv preprint arXiv:1603.08471},
year = {2016}
}