Related papers: A current source with metrological precision made …
We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped…
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and…
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an…
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias,…
Single-photon sources based on semiconductor quantum dots have emerged as an excellent platform for high efficiency quantum light generation. However, scalability remains a challenge since quantum dots generally present inhomogeneous…
On-chip electron sources have wide potential applications in miniature vacuum electronic devices and emission efficiency is one of their performance benchmarks. A cascade electron source based on series metal-insulator-metal horizontal…
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency…
We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a…
We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting…
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by…
A semiconductor tracker for muon scattering tomography is presented. The tracker contains silicon strip sensors with an $80\,\mu$m pitch, precision mechanics and integrated cooling. The electronic readout of the sensors is performed by a…
We demonstrate a stable CMOS-compatible on-chip multiple-wavelength source by filtering and modulating individual lines from a frequency comb generated by a microring resonator optical parametric oscillator.. We show comb operation in a…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
Correlated photon pairs are a fundamental building block of quantum photonic systems. While pair sources have previously been integrated on silicon chips built using customized photonics manufacturing processes, these often take advantage…
Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly…
The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the…
A simple and low cost apparatus has been designed and built to measure the electrical resistivity, ($\rho$), of metal and semiconductors in 300-620 K temperature range. The present design is suitable to do measurement on rectangular bar…