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Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth…

We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…

A 12 bit Pipeline ADC fabricated in a 0.18 $\mu$m pure digital CMOS technology is presented. Its nominal conversion rate is 110MS/s and the nominal supply voltage is 1.8V. The effective number of bits is 10.4 when a 10MHz input signal with…

Hardware Architecture · Computer Science 2011-11-09 Terje N. Andersen , Atle Briskemyr , Frode Telsto , Johnny Bjornsen , Thomas E. Bonnerud , Bjornar Hernes , Oystein Moldsvor

As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced…

We present a method for producing sub-100 fs electron bunches that are suitable for single-shot ultrafast electron diffraction experiments in the 100 keV energy range. A combination of analytical results and state-of-the-art numerical…

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…

Single-photon source is the cornerstone for modern quantum information processing. The present work derives the theoretical limit of single-photon purity for general parametric heralded single-photon sources, and subsequently demonstrates a…

Quantum Physics · Physics 2025-02-10 Haoyang Wang , Huihong Yuan , Qiang Zeng , Lai Zhou , Haiqiang Ma , Zhiliang Yuan

The purpose of this project was to design and implement a pipeline Analog-to-Digital Converter using 0.35um CMOS technology. Initial requirements of a 25-MHz conversion rate and 8-bits of resolution where the only given ones. Although…

Hardware Architecture · Computer Science 2012-07-25 Moslem Rashidi , Mikael Hogrud , Donatas Siaudinis , Affaq Qamar , Imran Khan

Phasor Measurement Units (PMUs) are measurement devices long used in transmission systems and today even more essential for a proper monitoring of distribution grids. The expected massive penetration of distributed energy resources (DERs)…

Systems and Control · Electrical Eng. & Systems 2020-03-03 Carlo Guarnieri Calo\' Carducci , Gianluca Lipari , Nicola Giaquinto , Ferdinanda Ponci , Antonello Monti

We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Enrico Prati , Matteo Belli , Marco Fanciulli , Giorgio Ferrari

Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…

This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was…

Materials Science · Physics 2011-06-22 Christophe Krzeminski , Xiaohui Tang , Nicolas Reckinger , Vincent Bayot , Emmanuel Dubois

The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become…

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 A. Rossi , T. Ferrus , W. Lin , T. Kodera , D. A. Williams , S. Oda

On-silicon inductors using a bulk 0.18 {\mu}m CMOS process have been designed. By shunting different metal layers in parallel, inductor values and quality factors were simulated. Selected inductors were then employed in two open-loop buck…

Applied Physics · Physics 2019-10-01 Nan Xu , Wing-Hung Ki

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…

Mesoscale and Nanoscale Physics · Physics 2009-04-28 W. H. Lim , H. Huebl , L. H. Willems van Beveren , S. Rubanov , P. G. Spizzirri , S. J. Angus , R. G. Clark , A. S. Dzurak

A single photon source is a key enabling technology in device-independent quantum communication, quantum simulation for instance boson sampling, linear optics-based and measurement-based quantum computing. These applications involve many…

While integrated photonics is a robust platform for quantum information processing, architectures for photonic quantum computing place stringent demands on high quality information carriers. Sources of single photons that are highly…

A periodically driven quantum capacitor may function as an on-demand single electron source as it has recently been demonstrated experimentally. However, the accuracy at which single electrons are emitted is not yet understood. Here we…

Mesoscale and Nanoscale Physics · Physics 2015-03-14 Mathias Albert , Christian Flindt , Markus Büttiker
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