Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at deep cryogenic temperatures, below 1 K, requires switching performance beyond levels facilitated by currently available CMOS technologies. We have manufactured fully depleted silicon-on-insulator MOSFETs tailored for overcoming the power dissipation barrier towards sub-1 K applications. With these cryo-optimized transistors we achieve a major milestone of reaching subthreshold swing of 0.3 mV/dec at 420 mK, thereby enabling very-large-scale integration of cryo-CMOS electronics for ultra-low temperature applications.
@article{arxiv.2410.01077,
title = {Millikelvin Si-MOSFETs for Quantum Electronics},
author = {Nikolai Yurttagül and Markku Kainlauri and Jan Toivonen and Sushan Khadka and Antti Kanniainen and Arvind Kumar and Diego Subero and Juha T. Muhonen and Mika Prunnila and Janne S. Lehtinen},
journal= {arXiv preprint arXiv:2410.01077},
year = {2025}
}