Related papers: A current source with metrological precision made …
One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Amp\`ere's force law will allow one to…
Accurate state-of-charge (SOC) estimation is essential for optimizing battery performance, ensuring safety, and maximizing economic value. Conventional current and voltage measurements, however, have inherent limitations in fully inferring…
Current fluctuations related to the discreteness of charge passing through small constrictions are termed shot noise. This unavoidable noise provides both advantages - being a direct measurement of the transmitted particles' charge, and…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
Negatively charged nitrogen-vacancy (NV) centers in diamond have been extensively studied as a promising high sensitivity solid-state magnetic field sensor at room temperature. However, their use for current sensing applications is limited…
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…
Silicon-based waveguide plasmon detectors have a great research interest because of CMOS compatibility and integration capability with other plasmonic integrated circuits. In this paper, a balanced metal-semiconductor-metal (MSM) integrated…
Fast, high-fidelity measurement is a key ingredient for quantum error correction. Conventional approaches to the measurement of superconducting qubits, involving linear amplification of a microwave probe tone followed by heterodyne…
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
We present the design process and implementation of fully open-source, ultra-low noise programmable current source systems in two configurations. Although originally designed as coil drivers for Optically Pumped Magnetometers (OPMs), the…
Understanding ultrafast coherent electron dynamics is necessary for application of a single-electron source to metrological standards, quantum information processing, including electron quantum optics, and quantum sensing. While the…
The fact that electrical current is carried by individual charges has been known for over 100 years, yet this discreteness has not been directly observed so far. Almost all current measurements involve measuring the voltage drop across a…
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…