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We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition,…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Electron counting experiments attempt to provide a current of a known number of electrons per unit time. We propose architectures utilizing a few readily available electron-pumps or turnstiles with the typical error rates of 100 ppm with…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
The quantum Josephson voltage standard is well established across the metrology community for many years. It relies on the synchronisation of the flux tunneling in the S/I/S Josepson junctions (JJ) with the microwave radiation (MW). The…
The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances…
Power consumption is a crucial aspect of IoT devices which often have to run on a battery for an extended period of time. Therefore, supply current measurements are crucial before deploying a device in the field. Multimeters and…
The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for…
We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low…
Electron counting experiments attempt to provide a current of a known number of electrons per unit time. We propose architectures utilizing a few readily available electron-pumps or turnstiles with modest error rates of 1 part per $10^4$…
This paper presents a proof-of-concept demonstration of the Skipper-CCD, a sensor with single-electron counting capability, as a promising technology for implementing an electron-pump-based current source. Relying on its single-electron…
Noisy voltage sources can be a limiting factor for fundamental physics experiments as well as for device applications in quantum information, mesoscopic circuits, magnetometry, and other fields. The best commercial DC voltage sources can be…
The new definition of the ampere calls for a quantum current standard able to deliver a flow of elementary charges, $e$, controlled with a relative uncertainty of $10^{-8}$. Despite many efforts, nanodevices handling electrons one by one…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e,…
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the…
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam…
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing…