Related papers: A current source with metrological precision made …
In the realm of fundamental quantum science and technologies, non-classical states of light, such as single-photon Fock states, are widely studied. However, current standards and metrological procedures are not optimized for low light…
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based…
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the…
We demonstrate the synchronization of current quantization in a parallel array of weakly coupled Josephson Junctions operating in the regime of the coherent quantum phase slip. The first quantized current step on the voltage-current…
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
An optical source that produces single photon pulses on demand has potential applications in linear optics quantum computation, provided that stringent requirements on indistinguishability and collection efficiency of the generated photons…
Sensor nodes and IoT systems require blocks that not only consume low power but also have good accuracy. Voltage reference generators are also considered important building blocks in sensor interface circuits. This paper presents a solution…
We describe the design and performance of a series of fast, precise current sensing noise thermometers. The thermometers have been fabricated with a range of resistances from 1.290 $\Omega$ down to 0.2 m$\mathrm{\Omega}$. This results in…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD)…
We compared the performance of a commercial ammeter and a home-made integrating electrometer in reading ionisation chamber currents less than 100 pA. The integrating electrometer charges a capacitor with the unknown current and measures the…
The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…
We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable…
CMOS imagers are becoming increasingly popular in astronomy. A very low noise level is required to observe extremely faint targets and to get high-precision flux measurements. Although CMOS technology offers many advantages over CCDs, a…
New technology, the ultrastable low-noise current amplifier and the electron pump, provide new methods for making traceable measurements of small DC electric currents. We review four traceability routes for small current measurements and…
Photon loss is the biggest enemy for scalable photonic quantum information processing. This problem can be tackled by using quantum error correction, provided that the overall photon loss is below a threshold of 1/3. However, all reported…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…