Related papers: A current source with metrological precision made …
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values…
The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
Quantum error correction is necessary to perform large-scale quantum computations in the presence of noise and decoherence. As a result, several aspects of quantum error correction have already been explored. These have been primarily…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices…
We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave…
Superconducting qubits are a leading platform for scalable quantum computing and quantum error correction. One feature of this platform is the ability to perform projective measurements orders of magnitude more quickly than qubit…
As the precision frontier of astrophysics advances towards the one millimagnitude level, flux calibration of photometric instrumentation remains an ongoing challenge. We present the results of a lab-bench assessment of the viability of…
We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of…
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region…
This paper introduces a constructive method for approximating relative continuum measurements in two-dimensional electrical impedance tomography based on data originating from either the point electrode model or the complete electrode…
Accurate prediction of chip performance is critical for ensuring energy efficiency and reliability in semiconductor manufacturing. However, developing minimum operating voltage ($V_{min}$) prediction models at advanced technology nodes is…
It is not so well-known that measurement-free quantum error correction protocols can be designed to achieve fault-tolerant quantum computing. Despite the potential advantages of using such protocols in terms of the relaxation of accuracy,…
We present a design for a wide-bandwidth, voltage-controlled current source that is easily integrated with radiofrequency magnetic field coils. Our design uses current feedback to compensate for the frequency-dependent impedance of a…
Quantum sensing is an emerging field with the potential to outperform classical methods in both precision and spatial resolution. However, the sensitivity of the underlying quantum platform also makes the sensors highly susceptible to their…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…
Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a non-zero DC source-drain bias voltage. Under…
Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the…