Related papers: A current source with metrological precision made …
A promising result from optical quantum metrology is the ability to achieve sub-shot-noise performance in transmission or absorption measurements. This is due to the significantly lower uncertainty in light intensity of quantum beams with…
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…
The controlled and accurate emission of coherent electronic wave packets is of prime importance for future applications of nano-scale electronics. Here we present a theoretical and experimental analysis of the finite-frequency noise…
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…
Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the…
We present the results of an industry-grade fabrication of superconducting qubits on 200 mm wafers utilizing CMOS-established processing methods. By automated waferprober resistance measurements at room temperature, we demonstrate a…
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their…
The scaleup of quantum computers operating in the microwave domain requires advanced control electronics, and the use of integrated components that operate at the temperature of the quantum devices is potentially beneficial. However, such…
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we…
The estimation of classical CMOS "constant-field" or "Dennard" scaling methods that define scaling factors for various dimensional and electrical parameters have become less accurate in the deep-submicron regime, which drives the need for…
Any characterization of a single-photon source is not complete without specifying its second-order degree of coherence, i.e., its $g^{(2)}$ function. An accurate measurement of such coherence functions commonly requires high-precision…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented. The measurements cover electric field values between 2.5…
The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular…
The robustness of current and voltage references to process, voltage and temperature (PVT) variations is paramount to the operation of integrated circuits in real-world conditions. However, while recent voltage references can meet most of…
A strain sensor inspired by a Widlar self-biased current source topology called $\beta$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the…
The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in…
An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received.…
Light sources on the scale of single molecules can be addressed and characterized on their proper sub-nanometer scale by scanning tunneling microscopy induced luminescence (STML). Such a source can be driven by defined short charge pulses…
A low cost, stable, programmable, unipolar current source is described. The circuit is designed in view of a modular arrangement, suitable for applications where several DC sources must be controlled at once. A hybrid switching/linear…