The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements of a single point breakdown in an ultrathin dielectric. It was found that the minority carrier injection level was about 70%.
@article{arxiv.0803.3599,
title = {A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact},
author = {Mike W. Denhoff},
journal= {arXiv preprint arXiv:0803.3599},
year = {2008}
}
Comments
2 pages, 1 figure, 28th International Conference on the Physics of Semiconductors, Vienna, 24-28 July 2006