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We present a closed description of the charge carrier injection process from a conductor into an insulator. Common injection models are based on single electron descriptions, being problematic especially once the amount of charge-carriers…

Materials Science · Physics 2007-05-23 F. Neumann , Y. A. Genenko , C. Melzer , S. V. Yampolskii , H. von Seggern

Self-consistent solution of charge injection and transport in low mobility LEDs is reported . We show that explicit description of the contact region under the same premise as transport equation is needed to accurately evaluate the…

Soft Condensed Matter · Physics 2009-11-07 Yevgeni Preezant , Nir Tessler

Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors…

Materials Science · Physics 2024-10-10 Xiujun Lian , Hanwei Gao

A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed which incorporates space-charge effects in the description of the injection process. The amount…

Materials Science · Physics 2008-11-27 S. V. Yampolskii , Yu. A. Genenko , C. Melzer , K. Stegmaier , H. von Seggern

The conductance through a semi-infinite one-dimensional wire, partly embedded in a superconducting bulk electrode, is studied. When the electron-electron interactions within the wire are strongly repulsive, the wire effectively decouples…

Strongly Correlated Electrons · Physics 2009-11-13 Raphael Matthews , Oded Agam

By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic…

Mesoscale and Nanoscale Physics · Physics 2022-10-26 Jason A. Röhr

A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and…

Other Condensed Matter · Physics 2009-11-13 David Snoke

Logarithmic voltage profile characteristic to two-dimensional current flows has been reported for several semiconductor surfaces. We analyse this phenomenon within a simple model of accumulation and inversion layers. Prompted by numerical…

Mesoscale and Nanoscale Physics · Physics 2015-12-23 Jakub Lis

We study the dielectric function of the homogeneous semiconductor hole liquid of p-doped bulk III-V zinc-blende semiconductors within random phase approximation. The single-particle physics of the hole system is modeled by Luttinger's…

Strongly Correlated Electrons · Physics 2011-10-14 John Schliemann

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such…

This paper contains a detailed derivation of the photoinduced current density at third order in the coupling between a semiconductor and a multifrequency photon field, starting from its standard textbook expression as a third order time…

Mesoscale and Nanoscale Physics · Physics 2008-10-29 M. Combescot , O. Betbeder-Matibet

Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical…

Mesoscale and Nanoscale Physics · Physics 2019-04-04 Gaetano Calogero , Nick R. Papior , Mohammad Koleini , Matthew Helmi Leth Larsen , Mads Brandbyge

The lowest-energy excitations of superconductors do not carry an electric charge, as their wave function is equally electron-like and hole-like. This fundamental property is not easy to study in electrical measurements that rely on the…

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

Materials Science · Physics 2012-12-20 Emily G. Bittle , Joseph W. Brill , Joseph P. Straley

A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…

Materials Science · Physics 2015-04-09 Wei Yi , Venkatesh Narayanamurti , Joshua M. O. Zide , Seth R. Bank , Arthur C. Gossard

The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n junctions. They are usually employed for the calculation of the…

Materials Science · Physics 2007-05-23 Miron J. Cristea

Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the…

Applied Physics · Physics 2022-04-11 M. L. Inche Ibrahim , Anvar A. Zakhidov

A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density…

Materials Science · Physics 2015-05-13 F. Neumann , Y. A. Genenko , C. Melzer , H. von Seggern

We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…

Mesoscale and Nanoscale Physics · Physics 2009-05-29 S. Gustavsson , R. Leturcq , M. Studer , I. Shorubalko , T. Ihn , K. Ensslin , D. C. Driscoll , A. C. Gossard

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…

Materials Science · Physics 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Toshihiro Shimada , Koichiro Saiki
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