Related papers: A solution in 3 dimensions for current in a semico…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using…
On-silicon inductors using a bulk 0.18 {\mu}m CMOS process have been designed. By shunting different metal layers in parallel, inductor values and quality factors were simulated. Selected inductors were then employed in two open-loop buck…
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…
We perform strategic current injection in a small mesoscopic superconductor and control the (non)equilibrium quantum states in an applied homogeneous magnetic field. In doing so, we realize a current-driven splitting of multi-quanta…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
We present transport measurements of electrons on the surface of liquid helium in a microchannel device in which a constriction may be formed by a split-gate electrode. The surface electron current passing through the microchannel first…
We propose a theory of optically-induced currents in dielectrics and wide-gap semiconductors exposed to a non-resonant ultrashort laser pulse with a stabilized carrier-envelope phase. In order to describe strong-field electron dynamics,…
The 2D semimetal consisting of heavy holes and light electrons is studied. The consideration is based on assumption that electrons are quantized by magnetic field while holes remain classical. We assume also that the interaction between…
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device…
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, medium injection, high injection levels and the ohmic region…
A semiclassical model of charge transport in a semiconductor superlattice is solved, using moments in the wavenumber direction and finite elements in the spatial direction (first order). The selection of numerical methods guarantees the…
In this article we propose and numerically implement a mathematical model for the simulation of three-dimensional semiconductor devices characterized by an heterogeneous material structure. The model consists of a system of nonlinearly…
We propose to measure the superradiance effect by observing the current through a semiconductor double-dot ststem. An electron and a hole are injected separately into one of the quantum dots to form an exciton and then recombine…
The minority carrier lifetime of semiconductor materials is a crucial performance parameter for optoelectronic devices. However, the existing minority carrier lifetime measurement techniques necessitate delicate optical measurement systems…
We propose a new approach to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The method is…
The variation of current I with voltage V for poly(phenylene vinylene) and other polymer light-emitting diodes has been attributed to carriers tunneling into broad conduction and valence bands. In actuality the electrons and holes tunnel…
We study the current-voltage characteristics of a superconducting junction with particle losses at the contacts. We adopt the Keldysh formalism to compute the steady-state current for varying transmission of the contact. In the low…
We propose an inductive method to measure critical current density $J_c$ in bulk superconductors. In this method, an ac magnetic field is generated by a drive current $I_0$ flowing in a small coil mounted just above the flat surface of…
The quantization of the current in a superconducting quantum point contact is reviewed and the critical current is discussed at different temperatures depending on the carrier concentration as well by suggesting a constant potential in the…