Related papers: A solution in 3 dimensions for current in a semico…
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…
In this paper we report a semianalytical model of the mass transfer impedance in microfluidic electrochemical chips (MEC). It is based on the molar advection diffusion equation in a microfluidic channel with a Poiseuille flow and an…
The coherent optical injection and temporal decay of spin and charge currents in semiconductor heterostructures is described microscopically, including excitonic effects, carrier LO-phonon and carrier-carrier scattering, as well as…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…
The exact expression for the phase-dependent linear conductance of a weakly damped superconducting quantum point contact is obtained. The calculation is performed by summing up the complete perturbative series in the coupling between the…
Self-consistent, mean-field description of charge injection into a dielectric medium is modified to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image…
As a result of absorption of X-ray quantum in a semiconductor, the generation of electron-hole pairs takes place in a small volume (diameter < 0.5 mkm). Their surplus energy is lost due to the scattering on phonons of the crystal lattice.…
The errors arising in ab initio density functional theory studies of semiconductor point defects using the supercell approximation are analyzed. It is demonstrated that a) the leading finite size errors are inverse linear and inverse cubic…
A new method to determine the breakdown voltage of SiPMs is presented. It is backed up by a DC model which describes the breakdown phenomenon by distinct avalanche turn-on ($V_{01}$) and turn off ($V_{10}$) voltages. It is shown that…
Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…
Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few Mohm level. Meanwhile,…
Selenium is an elemental semiconductor with a wide bandgap suitable for a range of optoelectronic and solar energy conversion technologies. However, developing such applications requires an in-depth understanding of the fundamental material…
We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…
Analytical results for the dielectric function in RPA are derived for three-, two-, and one-dimensional semiconductors in the weakly-degenerate limit. Based on this limit, quantum corrections are derived. Further attention is devoted to…
We have developed and applied a mobility edge model that takes into account drift and diffusion currents to characterize the space charge limited current in organic semiconductors. The numerical solution of the drift-diffusion equation…
The formation of a submicron optical cavity on one side of a metal-insulator-metal (MIM) tunneling device induces a measurable electrical current between the two metal layers with no applied voltage. Reducing the cavity thickness increases…
Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of…
A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the…
We present a high-sensitivity microwave vector detection system for studying the low-dimensional electron system embedded in the gaps of a coplanar waveguide at low temperatures. Using this system, we have achieved 0.005% and…
We present a semiclassical analysis of the instability of an electron shuttle composed of three quantum dots: two are fixed and coupled via leads to electron resevoirs at different chemical potentials, while the central dot is mounted on a…