Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions
Materials Science
2007-05-23 v2
Abstract
Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of diffused semiconductor junctions. The measurement technique for the determination of the built-in voltage is also described.
Cite
@article{arxiv.cond-mat/0702324,
title = {Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions},
author = {Miron J. Cristea},
journal= {arXiv preprint arXiv:cond-mat/0702324},
year = {2007}
}
Comments
4 pages