First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions
Mathematical Physics
2007-05-23 v4 Materials Science
math.MP
Abstract
Based on semiconductor materials fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused -Gaussian profile- semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions.
Cite
@article{arxiv.math-ph/0609004,
title = {First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions},
author = {Miron J. Cristea},
journal= {arXiv preprint arXiv:math-ph/0609004},
year = {2007}
}
Comments
8 pages, 1 figure