Related papers: A solution in 3 dimensions for current in a semico…
In this paper, we study the well-posedness, ill-posedness and uniqueness of the stationary 3-D radial solution to the bipolar isothermal hydrodynamic model for semiconductors. The density of electron is imposed with sonic boundary and…
We report the observation of quasi-particles with a charge q=e/5 detected by shot noise measurements in the 2/5 conducting channel (filling factor 2/5). This is in agreement with previous measurements that showed that the current in the…
The thermoemf in bipolar semiconductors is calculated. It is shown that it is necessary to take into account the nonequilibrium distribution of electron and hole concentrations (Fermi quasilevels of the electrons and holes). We find that…
Electric current in semiconductors is considered as a function of time. Nonequilibrium fluctuations of the current are studied for strongly nonuniform samples. It is demonstrated that at special conditions the total electric current through…
The point-contact spectroscopy, in contrast to the tunneling spectrocopy, considers small electrical contacts with direct conductivity. In the normal state, it enables one to measure the spectral function of electron-boson interaction. In…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
The current-voltage characteristics (IVC) of $S-c-N$ point contacts of superconductors with a small coherence length ${{\xi}_{0}}$ reveal steps with discrete values of the differential resistance. This peculiarity is associated with a…
First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical properties. But current standard approach using the so-called…
For semiconductors and semimetals possessing a narrow gap between bands with different parity, the dispersion of the dielectric function is explicitly evaluated in the infrared region. The imaginary part of the dielectric function has a…
The analytical solution of the equation describing diffusion of intrinsic point defects has been obtained for a one-dimensional finite-length domain. This solution is intended for investigating and modeling the changes in defect…
The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron-hole and exciton-phonon interactions, is a great challenge for modern computational science. These NCs typically…
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a…
We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect…
Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to…
Optical transitions in a semiconductor quantum dot are theoretically investigated, with emphasis on the coupling to longitudinal optical phonons, and including excitonic effects. When limiting to a finite number of $m$ electron and $n$ hole…
The mathematical modeling and numerical simulation of semiconductor-electrolyte systems play important roles in the design of high-performance semiconductor-liquid junction solar cells. In this work, we propose a macroscopic mathematical…
It has been a general trend to develop low-voltage electron microscopes due to their high imaging contrast of the sample and low radiation damage. Atom-resolved transmission electron microscopes with voltages as low as 15-40 kV have been…
At nonzero temperatures, superconductors contain excitations known as Bogoliubov quasiparticles. The mesoscopic dynamics of quasiparticles inform the design of quantum information processors, among other devices. Knowledge of these dynamics…