Related papers: A solution in 3 dimensions for current in a semico…
We propose to measure Purcell effect by observing the current through a semeiconductor quantum dot embedded in a microcavity. An electron and a hole are injected separately into the quantum structure to form an exciton and then recombine…
The maximum value of the energy gap $\Delta\simeq 8\ meV$ and the ratio $2\delta/kT_c\simeq~2.5$ are determined for a high-temperature superconductor $\rm Bi_2Sr_2CaCu_2O_{8+y}$ by using point contacts. It was found that the…
A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic ---i.e., fully tridimensional--- description of Coulomb-correlated few-electron states,…
We study the influence of many-body interactions on the transport properties in a two-site charge Kondo circuit recently implemented in a hybrid metal-semiconductor double-quantum dot device [W. Pouse {\it et al.}, Nat. Phys. {\bf 19}, 492…
We argue that the dominant charge carrier in glassy semiconducting alloys is a compound particle in the form of an electron or hole bound to an intimate pair of topological lattice defects; the particle is similar to the polaron solution of…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
When an excess charge carrier is added to a one-dimensional (1D) semiconductor immersed in a polar solvent, the carrier can undergo self-localization into a large-radius adiabatic polaron. We explore the local optical absorption from the…
When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular…
The currents at the terminals of a mesoscopic conductor are evaluated in the presence of slowly oscillating potentials applied to the contacts of the sample. The need to find a charge and current conserving solution to this dynamic current…
Electric field dependent capacitance and dielectric loss in poly(3-hexylthiophene) are measured by precision capacitance bridge. Carrier mobility and density are estimated from fits to current-voltage and capacitance data. The capacitance…
Nanopositioning techniques currently applied to characterize physical properties of materials interesting for applications at the microscopic scale rely on high-voltage electronic control circuits that should have the lowest possible noise…
Interface circuits are the key components that enable the hybrid integration of superconductor and semiconductor digital electronics. The design requirements of superconductor-semiconductor interface circuits vary depending on the…
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal…
We investigate limits on the current of the PSI Injector II high intensity separate-sector isochronous cyclotron, in its present configuration and after a proposed upgrade. Accelerator Driven Subcritical Reactors, neutron and neutrino…
An electrode contact-related mechanism for the operational instability of organic electronic devices is proposed and confirmed via observation of a water-induced change in charge-injection barrier eights at the…
Single-photon emitters integrated into quantum optical circuits will enable new, miniaturized quantum optical devices. Here, we numerically investigate semiconductor quantum dots embedded to low refractive index contrast waveguides. We…
We calculate the neutral current jet production semi-inclusive deeply inelastic scattering process in this paper. Neutral current implies that interactions can be mediated by the photon, $Z^0$-boson and their interference. The initial…
We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter…