Related papers: A solution in 3 dimensions for current in a semico…
We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The…
Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it…
We calculate the AC linear response of a superconductor in a nonequilibrium electronic state. The nonequilibrium state is produced by injecting quasiparticles into the superconductor from normal leads through asymmetric tunnel contacts. The…
The quantum theory of conductivity of semiconductor objects, to which the quantum wells, wires and dots concern, is constructed. Average values of current and charge densities, induced by a weak electromagnetic field, are calculated. It is…
We report on measurements of the electrical conductivity in both a 2D triangular lattice of metallic beads and in a chain of beads. The voltage/current characteristics are qualitatively similar in both experiments. At low applied current,…
The sheet current model underlying the software 3D-MLSI package for calculation of inductances of multilayer superconducting circuits, has been further elaborated. The developed approach permits to overcome serious limitations on the shape…
A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function…
We investigate the microscopic contact of a cell/semiconductor hybrid. The semiconductor is nanostructured with the aim of single channel recording of ion channels in cell membranes. This approach will overcome many limitations of the…
We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a…
The degree of ionization of a nondegenerate two-dimensional electron-hole plasma is calculated using the modified law of mass action, which takes into account all bound and unbound states in a screened Coulomb potential. Application of the…
The health status of power semiconductor devices in power converters is important but difficult to monitor. This paper analyzes the relationship between harmonics in inverter control variables and a health precursor (the on-state voltage…
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…
Due to the quantum nature of current flow in single-electron devices, new physical phenomena can manifest when probed at finite frequencies. Here, we present a semi-classical small-signal model approach to replace complex single-electron…
The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure,…
Controllable point junctions between different quantum Hall phases are a necessary building block for the development of mesoscopic circuits based on fractionally-charged quasiparticles. We demonstrate how particle-hole duality can be…
Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of…
We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized…
We study a voltage-driven quantum point contact (QPC) strongly coupled to a qubit. We predict pronounced observable features in the QPC current that can be interpreted in terms of half-integer charge transfers. Our analysis is based on the…
In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum…
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…