Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, which may drive the system into nonlinear regimes. An analytic model is presented which describes the EBIC response when the {\it total} electron-hole pair generation rate exceeds the rate at which carriers are extracted by the photovoltaic cell, and charge accumulation and screening occur. The model provides a simple estimate of the onset of the high injection regime in terms of the material resistivity and thickness, and provides a straightforward way to predict the EBIC lineshape in the high injection regime. The model is verified by comparing its predictions to numerical simulations in 1 and 2 dimensions. Features of the experimental data, such as the magnitude and position of maximum collection efficiency versus electron beam current, are consistent with the 3 dimensional model.
@article{arxiv.1410.4435,
title = {Electron beam induced current in the high injection regime},
author = {Paul M. Haney and Heayoung P. Yoon and Prakash Koirala and Robert W. Collins and Nikolai B. Zhitenev},
journal= {arXiv preprint arXiv:1410.4435},
year = {2014}
}