Self-consistent, mean-field description of charge injection into a dielectric medium is modified to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image charge and the barrier change due to the field penetration into the injecting electrode that ensures validity of the model at both high and low injection rates including the barrier dominated and the space-charge dominated regimes. Comparison of the theory with experiment on an unipolar ITO/PPV/Au-device is presented.
@article{arxiv.0910.4127,
title = {Charge carrier injection into insulating media: single-particle versus mean-field approach},
author = {Yu. A. Genenko and S. V. Yampolskii and C. Melzer and K. Stegmaier and H. von Seggern},
journal= {arXiv preprint arXiv:0910.4127},
year = {2010}
}
Comments
32 pages, 9 figures; revised version accepted to PRB