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Predicting the Ionization Threshold for Carriers in Excited Semiconductors

Other Condensed Matter 2009-11-13 v1
Authors: David Snoke
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Abstract

A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.

Keywords

excitons in semiconductors

Cite

@article{arxiv.0709.1415,
  title  = {Predicting the Ionization Threshold for Carriers in Excited Semiconductors},
  author = {David Snoke},
  journal= {arXiv preprint arXiv:0709.1415},
  year   = {2009}
}

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