Photon emission induced by elastic exciton--carrier scattering in semiconductor quantum wells
Abstract
We present a study of the elastic exciton--electron () and exciton--hole () scattering processes in semiconductor quantum wells, including fermion exchange effects. The balance between the exciton and the free carrier populations within the electron-hole plasma is discussed in terms of ionization degree in the nondegenerate regime. Assuming a two-dimensional Coulomb potential statically screened by the free carrier gas, we apply the variable phase method to obtain the excitonic wavefunctions, which we use to calculate the 1 exciton--free carrier matrix elements that describe the scattering of excitons into the light cone where they can radiatively recombine. The photon emission rates due to the carrier-assisted exciton recombination in semiconductor quantum-wells (QWs) at room temperature and in a low density regime are obtained from Fermi's golden rule, and studied for mid-gap and wide-gap materials. The quantitative comparison of the direct and exchange terms of the scattering matrix elements shows that fermion exchange is the dominant mechanism of the exciton--carrier scattering process. This is confirmed by our analysis of the rates of photon emission induced by electron-assisted and hole-assisted exciton recombinations.
Keywords
Cite
@article{arxiv.cond-mat/0509492,
title = {Photon emission induced by elastic exciton--carrier scattering in semiconductor quantum wells},
author = {H. Ouerdane and R. Varache and M. E. Portnoi and I. Galbraith},
journal= {arXiv preprint arXiv:cond-mat/0509492},
year = {2008}
}
Comments
Thoroughly revised version of previous work. Weak and incorrect assumptions have been removed from the paper, and its scope has evolved: see abstract. This is the final version, i.e. as accepted for publication in the European Physical Journal B