Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems challenges the comprehension of the mechanisms that determine physical properties such as mobility. In this study, we investigate interlayer exciton diffusion in an H-stacked WSe2/WS2 heterobilayer. Our measurements are performed in the ultra-low exciton density regime at low temperatures to examine how the presence of charges affects exciton mobility. Remarkably, for charge doping near the Mott insulator phase, we observe a giant enhancement of exciton diffusion of three orders of magnitude compared to charge neutrality. We attribute this observation to mobile valence holes, which experience a suppressed moir\'e potential due to the electronic charge order in the conduction band, and recombine with any conduction electron in a non-monogamous manner. This new mechanism emerges for sufficiently large fillings in the vicinity of correlated generalized Wigner crystal and Mott insulating states. Our results demonstrate the potential to characterize correlated electron states through exciton diffusion and provide insights into the rich interplay of bosons and fermions in semiconductor heterostructures.
@article{arxiv.2409.18357,
title = {Giant enhancement of exciton diffusion near an electronic Mott insulator},
author = {Pranshoo Upadhyay and Daniel G. Suárez-Forero and Tsung-Sheng Huang and Mahmoud Jalali Mehrabad and Beini Gao and Supratik Sarkar and Deric Session and Kenji Watanabe and Takashi Taniguchi and You Zhou and Michael Knap and Mohammad Hafezi},
journal= {arXiv preprint arXiv:2409.18357},
year = {2025}
}