We study experimentally and theoretically the hybridization among intralayer and interlayer moir\'e excitons in a MoSe2/WS2 heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moir\'e excitons in the MoSe2/WS2 heterostack to a perpendicular electric field, monitor the field-induced dispersion and hybridization of intralayer and interlayer moir\'e exciton states, and induce a cross-over from type I to type II band alignment. Moreover, we employ perpendicular magnetic fields to map out the dependence of the corresponding exciton Land\'e g-factors on the electric field. Finally, we develop an effective theoretical model combining resonant and non-resonant contributions to moir\'e potentials to explain the observed phenomenology, and highlight the relevance of interlayer coupling for structures with close energetic band alignment as in MoSe2/WS2.
@article{arxiv.2304.14037,
title = {Field-induced hybridization of moir\'e excitons in MoSe$_2$/WS$_2$ heterobilayers},
author = {Borislav Polovnikov and Johannes Scherzer and Subhradeep Misra and Xin Huang and Christian Mohl and Zhijie Li and Jonas Göser and Jonathan Förste and Ismail Bilgin and Kenji Watanabe and Takashi Taniguchi and Alexander Högele and Anvar S. Baimuratov},
journal= {arXiv preprint arXiv:2304.14037},
year = {2024}
}